Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
نویسندگان
چکیده
2014 We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining character of these defects is not qualitatively changed by hydrogen. Revue Phys. Appl. 23 (1988) JUILLET 1988, PAGE 1337 Classification Physics Abstracts 78.60 62.20F 61.70N 66.30J
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